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2SC3636 - NPN Triple Diffused Planar Silicon Transistor

Features

  • High reliability (Adoption of HVP process).
  • Fast speed.
  • High breakdown voltage.
  • Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3636] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta.

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Full PDF Text Transcription

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Ordering number:EN1614C NPN Triple Diffused Planar Silicon Transistor 2SC3636 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High reliability (Adoption of HVP process). · Fast speed. · High breakdown voltage. · Adoption of MBIT process.
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